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IRFZ44NSPBF - Infineon

Description: Infineon IRFZ44NSPBF N-channel MOSFET Transistor, 49 A, 55 V, 3-Pin D2PAK

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IRFZ44NSPBF - Infineon - PCB symbol
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PCB Footprints
IRFZ44NSPBF - Infineon PCB footprint - Other - Other - D2PAK
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3D Models
IRFZ44NSPBF - Infineon - 3D model - Other - D2PAK
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IRFZ44NSPBF Details

  • Manufacturer Part Number:

    IRFZ44NSPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    88 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44NSPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44NSPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ44NSPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). Refer to the datasheet for specific SOA curves.
  • To ensure proper thermal management, ensure the device is mounted on a suitable heat sink with a thermal interface material (TIM) to reduce thermal resistance. The heat sink should be designed to keep the junction temperature (Tj) below the maximum rated temperature (150°C for the IRFZ44NSPBF). Monitor the device's thermal performance using thermal simulation tools or thermal imaging cameras.
  • The recommended gate drive voltage for the IRFZ44NSPBF is typically between 10V to 15V, depending on the specific application requirements. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
  • To minimize EMI when using the IRFZ44NSPBF, use a proper PCB layout with a solid ground plane, keep the gate drive circuitry close to the device, and use a low-inductance gate resistor. Additionally, consider using EMI filters or shielding to reduce radiated emissions.
  • The maximum allowed drain-source voltage (Vds) for the IRFZ44NSPBF is 55V. Exceeding this voltage can damage the device.

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IRFZ44NSPBF Overview

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IRFZ44NSPBF Alternates

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