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IRHMS597Z60 - Infineon

Description: Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS

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PCB Footprints
IRHMS597Z60 - Infineon PCB footprint - Other - Other - Low-Ohmic TO-254AA
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3D Models
IRHMS597Z60 - Infineon  - 3D model - Other - Low-Ohmic TO-254AA
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IRHMS597Z60 Details

  • Manufacturer Part Number:

    IRHMS597Z60

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.9

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    1250 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-XSFM-P3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    RH - 100K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    180 ns

  • Turn-on Time-Max (ton):

    210 ns

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IRHMS597Z60 Overview

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Part Image IRHMS597Z60 International Rectifier

Power Field-Effect Transistor, 45A I(D), 30V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA