IRHNJ597130 - Infineon

Description: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5), 100V, P-Channel

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Image	Part Number	Model
	IRHNJ597130PBF International Rectifier Power Field-Effect Transistor, 12.5A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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IRHNJ597130 - Infineon

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Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

BGA

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Dual-In-Line Sockets

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Header, Shrouded

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QFP-PLCC

Radial Diameter

SIL-MIL

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IRHNJ597130 Alternates