Part Image

IRL1404ZPBF - Infineon

Description: MOSFET N-ch HEXFET 200A 40V TO220AB

Download IRL1404ZPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRL1404ZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB(H=4.82mm)
click to zoom
3D Models
IRL1404ZPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB(H=4.82mm)
click to zoom

IRL1404ZPBF Details

  • Manufacturer Part Number:

    IRL1404ZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    570 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    790 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL1404ZPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL1404ZPBF is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 1V and 30V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias under the MOSFET, and use a solid ground plane.
  • To protect the IRL1404ZPBF from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.
  • The recommended gate resistor value for the IRL1404ZPBF is between 10Ω and 100Ω, depending on the specific application and switching frequency.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRL1404ZPBF Overview

Use the download button to access the IRL1404ZPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRL14, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRL1404ZPBF

Showing 0 results

IRL1404ZPBF Alternates

Showing results

Image Part Number Model
Part Image AUIRL1404Z International Rectifier

Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL1404Z International Rectifier

Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB