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IRL60B216 - Infineon

Description: N-channel Power MOSFET 60V 305A TO220 Infineon IRL60B216 N-channel MOSFET Transistor, 305 A, 60 V, 3-Pin TO-220

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Symbol
IRL60B216 - Infineon - PCB symbol
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PCB Footprints
IRL60B216 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB_1
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3D Models
IRL60B216 - Infineon - 3D model - Transistor Outline, Vertical - TO220AB_1
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IRL60B216 Details

  • Manufacturer Part Number:

    IRL60B216

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1045 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    780 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL60B216 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL60B216 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 60V.
  • The recommended gate resistor value for the IRL60B216 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IRL60B216 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the IRL60B216 from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.

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IRL60B216 Overview

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