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IRL6297SDTRPBF - Infineon

Description: Infineon IRL6297SDTRPBF Dual N-channel MOSFET, 15 A, 20 V DirectFET, HEXFET, 3+Tab-Pin SA

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Symbol
IRL6297SDTRPBF - Infineon - PCB symbol
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PCB Footprints
IRL6297SDTRPBF - Infineon PCB footprint - Other - Other - IRL6297SDTRPBF-1
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3D Models
IRL6297SDTRPBF - Infineon - 3D model - Other - IRL6297SDTRPBF-1
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IRL6297SDTRPBF Details

  • Manufacturer Part Number:

    IRL6297SDTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Drain Current-Max (ID):

    58 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IRL6297SDTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL6297SDTRPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • Use a multi-layer PCB with a solid ground plane, keep the device close to the heat sink, and use a shielded cable for the gate driver to minimize EMI.
  • Yes, the IRL6297SDTRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • Use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures to prevent ESD damage.

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IRL6297SDTRPBF Overview

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