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IRL7833LPBF - Infineon

Description: MOSFET N-CH 30V 150A TO-262

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Symbol
IRL7833LPBF - Infineon - PCB symbol
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PCB Footprints
IRL7833LPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-262 Package
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3D Models
IRL7833LPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-262 Package
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IRL7833LPBF Details

  • Manufacturer Part Number:

    IRL7833LPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    470 pF

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL7833LPBF Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the IRL7833LPBF in their application note AN2013-01. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper biasing during startup, Infineon recommends using a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using an RC network or a dedicated soft-start IC.
  • Although the datasheet specifies a maximum gate-source voltage of ±20V, it's recommended to limit the gate voltage to ±15V to ensure reliable operation and prevent damage to the device.
  • Infineon recommends using a combination of overcurrent protection (OCP) and overtemperature protection (OTP) circuits to prevent damage to the device. These can be implemented using external components or dedicated ICs.
  • The recommended drive strength for the gate pin is typically in the range of 1-5mA. This ensures reliable switching and minimizes power losses in the device.

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