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IRLB4030PBF - Infineon

Description: IRLB4030PBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB Infineon

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IRLB4030PBF - Infineon - PCB symbol
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PCB Footprints
IRLB4030PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRLB4030PBF-1
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3D Models
IRLB4030PBF - Infineon - 3D model - Transistor Outline, Vertical - IRLB4030PBF-1
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IRLB4030PBF Details

  • Manufacturer Part Number:

    IRLB4030PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    305 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    290 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Pulsed Drain Current-Max (IDM):

    730 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLB4030PBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRLB4030PBF can withstand is 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the IRLB4030PBF is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRLB4030PBF is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the IRLB4030PBF from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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IRLB4030PBF Overview

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