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IRLM220ATF - onsemi

Description: Avalanche Rugged Technology; Rugged Gate Oxide Technology; Lower Input Capacitance; Improved Gate Charge; Extended Safe Operating Area; Lower Leakage Current : 10 μA (Max.) @ VDS = 200 V; Lower rDS(on) : 0.609 Ω (Typ.)

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IRLM220ATF Alternates

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Image Part Number Model
Part Image IRLM220A Samsung Semiconductor

Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA