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IRLML6401TRPBF - Infineon

Description: INFINEON - IRLML6401TRPBF - MOSFET, P, MICRO3

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PCB Footprints
IRLML6401TRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - Micro3 (SOT23)
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IRLML6401TRPBF Details

  • Manufacturer Part Number:

    IRLML6401TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    33 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    125 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.3 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLML6401TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLML6401TRPBF is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout and design, including using a solid ground plane, minimizing trace lengths, and using bypass capacitors to reduce noise and ringing.
  • To prevent ESD damage, it's essential to follow proper ESD handling procedures, such as using ESD-safe workstations, wearing ESD-protective clothing, and using ESD-protective packaging and storage materials.
  • For reliable assembly, it's recommended to follow Infineon's guidelines for soldering and assembly, including using a controlled soldering temperature, using a soldering iron with a temperature-controlled tip, and avoiding excessive mechanical stress.

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IRLML6401TRPBF Overview

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Part Image SI2333DS Vishay Siliconix

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Part Image IRLML6401TR CYT Opto-electronic

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2333DS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4.1A I(D), 12V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6401TRPBF-1 Infineon Technologies AG

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6401TR International Rectifier

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For a full list of alternate parts for IRLML6401TRPBF, check out Findchips.com