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IRLR024 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRLR024PBF

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IRLR024 - Vishay PCB footprint - Other - Other - D-PAK (TO-252)
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IRLR024 Details

  • Manufacturer Part Number:

    IRLR024

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-251AA

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR024 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR024 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. You can also use thermal interface materials to improve heat transfer.
  • The recommended gate drive voltage for the IRLR024 is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's recommended to consult the datasheet for specific gate drive requirements for your application.
  • Yes, the IRLR024 is suitable for high-frequency switching applications up to 1MHz. However, you'll need to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
  • To protect the IRLR024 from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors.

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IRLR024 Overview

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IRLR024 Alternates

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Image Part Number Model
Part Image IRLR024TRPBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR024TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR024 International Rectifier

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR024 Samsung Semiconductor

Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SIHLR024TRL-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRLR024, check out Findchips.com