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IRLS3036-7PPBF - Infineon

Description: IRLS3036-7PPBF N-Channel MOSFET, 300 A, 60 V HEXFET, 7-Pin D2PAK Infineon

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PCB Footprints
IRLS3036-7PPBF - Infineon PCB footprint - Other - Other - PG-TO263-7-3
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IRLS3036-7PPBF - Infineon  - 3D model - Other - PG-TO263-7-3
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IRLS3036-7PPBF Details

  • Manufacturer Part Number:

    IRLS3036-7PPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Pulsed Drain Current-Max (IDM):

    1000 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLS3036-7PPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLS3036-7PPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the layout compact, and use shielding where possible. Additionally, ensure that the device is placed away from high-frequency components and antennas.
  • To protect the device from ESD, handle the device by the body or use an anti-static wrist strap, store the device in anti-static packaging, and use ESD-protected workstations and tools.
  • The recommended storage condition for the IRLS3036-7PPBF is in a dry, cool place, away from direct sunlight, with a relative humidity of 60% or less, and at a temperature range of -40°C to 30°C.

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IRLS3036-7PPBF Overview

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Part Image IRLS3036TRL7PP Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

Part Image AUIRLS3036-7P Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB