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IRLS4030TRLPBF - Infineon

Description: N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount D2PAK

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IRLS4030TRLPBF - Infineon PCB footprint - Other - Other - IRLS4030TRLPBF-2
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IRLS4030TRLPBF Details

  • Manufacturer Part Number:

    IRLS4030TRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    305 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Pulsed Drain Current-Max (IDM):

    730 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLS4030TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLS4030TRLPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
  • Use a multi-layer PCB with a solid ground plane, keep the device close to the heat sink, and use a shielded cable for the gate driver to minimize EMI.
  • Yes, the IRLS4030TRLPBF is suitable for high-frequency switching applications up to 100 kHz, but ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage to the device.

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IRLS4030TRLPBF Overview

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IRLS4030TRLPBF Alternates

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Image Part Number Model
Part Image CSD19536KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRLPBF International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRR International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRL Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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