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IRLU7833PBF - Infineon

Description: MOSFET N-CH 30V 140A I-PAK

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PCB Footprints
IRLU7833PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I-PAK (TO-251AA)
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3D Models
IRLU7833PBF - Infineon  - 3D model - Transistor Outline, Vertical - I-PAK (TO-251AA)
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IRLU7833PBF Details

  • Manufacturer Part Number:

    IRLU7833PBF

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    530 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    470 pF

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    560 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLU7833PBF Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via under the device are also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The IRLU7833PBF has an integrated ESD protection diode, but it's still recommended to follow standard ESD handling precautions during assembly and handling. A human body model (HBM) ESD rating of ±2 kV and a machine model (MM) ESD rating of ±200 V are specified in the datasheet.
  • Yes, the IRLU7833PBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
  • The recommended gate drive voltage for the IRLU7833PBF is between 10 V and 15 V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI emissions.

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