LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas):
68 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
55 V
Drain Current-Max (ID):
18 A
Drain-source On Resistance-Max:
0.075 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
45 W
Pulsed Drain Current-Max (IDM):
72 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
MATTE TIN OVER NICKEL
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRLZ24NSPBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRLZ24NSPBF is -55°C to 150°C.
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
The recommended gate drive voltage for the IRLZ24NSPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRLZ24NSPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Handle the IRLZ24NSPBF with ESD-protective equipment, and ensure proper grounding and shielding during assembly and testing.
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Expert Contribution
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System Verified
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Community Approved
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IRLZ24NSPBF Overview
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