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ISL33002IRTZ - Renesas Electronics

Description: The ISL33002 two-channel bus buffer provides the buffering necessary to extend the bus capacitance beyond the 400pF maximum specified by the I2C specification. In addition, the ISL33002 features rise time accelerator circuitry to reduce power consumption from passive bus pull-up resistors and improve data-rate performance. The device also includes hot-swap circuitry to prevent corruption of the data and clock lines when I2C devices are plugged into a live backplane, and the ISL33002 adds level translation f

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ISL33002IRTZ - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - L8.3x3A 8 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
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3D Models
ISL33002IRTZ - Renesas Electronics  - 3D model - Small Outline No-lead - L8.3x3A 8 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
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ISL33002IRTZ Details

  • Manufacturer Part Number:

    ISL33002IRTZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TDFN

  • Package Description:

    TDFN-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    L8.3X3A

  • HTS Code:

    8542.39.00.01

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    2017-10-13

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Interface IC Type:

    BUS BUFFERS

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    0.8 mm

  • Supply Voltage-Max:

    5.5 V

  • Supply Voltage-Min:

    2.3 V

  • Supply Voltage-Nom:

    2.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3 mm

ISL33002IRTZ Frequently Asked Questions (FAQs)

  • A good PCB layout for the ISL33002IRTZ involves keeping the input and output traces short and separate, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.
  • To ensure proper power-up and initialization of the ISL33002IRTZ, make sure to follow the recommended power-up sequence, which involves applying VCC before applying VIN. Also, ensure that the EN pin is high during power-up, and that the device is properly configured through the I2C interface before enabling the output.
  • The ISL33002IRTZ can drive a maximum capacitive load of 10uF. Exceeding this limit may cause instability or oscillations in the output voltage. If a larger capacitive load is required, consider adding an external buffer capacitor or using a different device.
  • To troubleshoot issues with the ISL33002IRTZ, start by checking the power supply and input voltage levels, ensuring they are within the recommended operating range. Next, verify the I2C communication by checking the clock and data lines, and ensure that the device is properly configured and enabled. If issues persist, consult the datasheet and application notes for guidance, or contact Renesas support for further assistance.
  • The ISL33002IRTZ is rated for operation up to 125°C, but its performance and reliability may degrade at higher temperatures. If operating in a high-temperature environment, ensure that the device is properly derated and that the PCB is designed to handle the increased thermal stress. Consult the datasheet and application notes for guidance on thermal management and derating.

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