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ISL9V3036S3ST - onsemi

Description: Industry Standard D2 -Pak package; Logic Level Gate Drive; SCIS Energy = 300mJ at TJ = 25°C

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ISL9V3036S3ST Overview

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Parts related to ISL9V3036S3ST

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ISL9V3036S3ST Alternates

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Image	Part Number	Model
	ISL9V3036S3ST Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB
	ISL9V3036S3S Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB
	ISL9V3036S3STS62Z Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB
	ISL9V3036S3SL99Z Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB
For a full list of alternate parts for ISL9V3036S3ST, check out Findchips.com