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IXBT10N170 - LITTELFUSE

Description: Disc Igbt Bimosfet-High Volt To-268Aa/Tube |Littelfuse IXBT10N170

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IXBT10N170 - LITTELFUSE  - 3D model
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IXBT10N170 Details

  • Manufacturer Part Number:

    IXBT10N170

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.25

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1800 ns

  • Turn-on Time-Nom (ton):

    63 ns

  • VCEsat-Max:

    3.8 V

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IXBT10N170 Overview

Use the download button to access the IXBT10N170 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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