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IXBX75N170A - LITTELFUSE

Description: Disc IGBT BiMosfet-High Volt TO-247AD High Voltage , - 20 V, 20 V, 65A , 25°C to 150°C

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PCB Footprints
IXBX75N170A - LITTELFUSE PCB footprint - Other - Other - IXBX75N170A-1
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3D Models
IXBX75N170A - LITTELFUSE  - 3D model - Other - IXBX75N170A-1
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IXBX75N170A Details

  • Manufacturer Part Number:

    IXBX75N170A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    110 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    110 ns

  • Gate-Emitter Thr Voltage-Max:

    5.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    478 ns

  • Turn-on Time-Nom (ton):

    66 ns

  • VCEsat-Max:

    6 V

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IXBX75N170A Overview

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