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IXDN602SIATR - LITTELFUSE

Description: Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC T/R

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Symbol
IXDN602SIATR - LITTELFUSE - PCB symbol
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PCB Footprints
IXDN602SIATR - LITTELFUSE PCB footprint - Other - Other - 8-Pin SOIC (N-PACKAGE)
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IXDN602SIATR - LITTELFUSE - 3D model - Other - 8-Pin SOIC (N-PACKAGE)
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IXDN602SIATR Details

  • Manufacturer Part Number:

    IXDN602SIATR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    8.1

  • High Side Driver:

    NO

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • Length:

    4.9 mm

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    35 V

  • Supply Voltage-Min:

    4.5 V

  • Supply Voltage-Nom:

    18 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Turn-off Time:

    0.038 µs

  • Turn-on Time:

    0.04 µs

  • Width:

    3.9 mm

IXDN602SIATR Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXDN602SIATR is a standard SOT23 package with a 5-pin configuration. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source, and the EN pin to a logic-level signal. The datasheet provides a recommended application circuit and biasing guidelines.
  • The maximum allowed power dissipation for the IXDN602SIATR is 1.4W. Exceeding this limit may cause the device to overheat and potentially fail.
  • The IXDN602SIATR is rated for operation up to 150°C. However, it's essential to consider the device's power dissipation and thermal management when operating in high-temperature environments.
  • To protect the IXDN602SIATR from ESD, handle the device with anti-static wrist straps, mats, or bags. The datasheet provides ESD handling guidelines and precautions.

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IXDN602SIATR Overview

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