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IXFA20N85XHV - LITTELFUSE

Description: MOSFET N-CH 850V 20A TO263

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IXFA20N85XHV Details

  • Manufacturer Part Number:

    IXFA20N85XHV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.7

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    850 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.33 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFA20N85XHV Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFA20N85XHV is a TO-220 Full Pack footprint with a minimum pad size of 120 mils x 120 mils and a thermal pad size of 200 mils x 200 mils.
  • Yes, IXFA20N85XHV is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time. However, it's essential to consider the device's thermal performance and ensure proper cooling to prevent overheating.
  • To ensure the reliability of IXFA20N85XHV in a high-temperature environment, it's crucial to follow the recommended derating curves, provide adequate cooling, and avoid exceeding the maximum junction temperature (Tj) of 175°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The recommended gate drive voltage for IXFA20N85XHV is between 10 V and 15 V. A higher gate drive voltage can reduce the device's switching losses, but it may also increase the risk of gate oxide breakdown. It's essential to ensure the gate drive voltage is within the recommended range to maintain the device's reliability.
  • Yes, you can parallel multiple IXFA20N85XHV devices to increase the current handling capability. However, it's essential to ensure that each device has an identical thermal environment and is driven by the same gate signal to prevent uneven current sharing. Additionally, consider the increased complexity and potential for oscillations when paralleling devices.

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IXFA20N85XHV Overview

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