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IXFA26N30X3 - LITTELFUSE

Description: N-Channel 300 V 26A (Tc) 170W (Tc) Surface Mount TO-263AA (IXFA), 66mOhm , -55°C ~ 150°C (TJ)

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PCB Footprints
IXFA26N30X3 - LITTELFUSE PCB footprint - Other - Other - TO-263_2025-2
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IXFA26N30X3 - LITTELFUSE  - 3D model - Other - TO-263_2025-2
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IXFA26N30X3 Details

  • Manufacturer Part Number:

    IXFA26N30X3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, 3/2 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.65

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFA26N30X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFA26N30X3 is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFA26N30X3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below 150°C.
  • Yes, you can parallel multiple IXFA26N30X3 devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
  • The recommended gate drive voltage for IXFA26N30X3 is between 10V and 15V, with a minimum rise and fall time of 10ns to ensure reliable switching and minimize EMI.

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IXFA26N30X3 Overview

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