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IXFB100N50P - LITTELFUSE

Description: Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264

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PCB Footprints
IXFB100N50P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFB110N60P3
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3D Models
IXFB100N50P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFB110N60P3
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IXFB100N50P Details

  • Manufacturer Part Number:

    IXFB100N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFB100N50P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXFB100N50P is -40°C to 150°C.
  • Yes, the IXFB100N50P is suitable for high-frequency switching applications due to its low switching losses and fast recovery time.
  • The recommended gate resistance for the IXFB100N50P is between 10 ohms and 100 ohms to ensure proper switching and minimize oscillations.
  • Yes, the IXFB100N50P can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and the gate drive is synchronized to prevent uneven current sharing.
  • The typical turn-on time for the IXFB100N50P is around 10-20 ns, and the typical turn-off time is around 20-30 ns.

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IXFB100N50P Overview

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Part Image IXFB100N50P IXYS Corporation

Power Field-Effect Transistor, 100A I(D), 500V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET