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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFB100N50Q3
- Part Number IXFB100N50Q3
- Manufacturer LITTELFUSE
- Last Modified Date Aug 2, 2021 10:22 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXFB100N50Q3 Details
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Manufacturer Part Number:
IXFB100N50Q3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Avalanche Energy Rating (Eas):
5000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
500 V
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Drain Current-Max (ID):
100 A
IXFB100N50Q3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXFB100N50Q3 is a standard TO-220 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
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Yes, the IXFB100N50Q3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the thermal derating curve.
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The recommended gate drive voltage for the IXFB100N50Q3 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
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Yes, you can parallel multiple IXFB100N50Q3 devices to increase current handling, but it's crucial to ensure that each device has its own gate drive circuitry and that the devices are properly matched to avoid current imbalance and thermal runaway.
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IXFB100N50Q3 Overview
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