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IXFH26N50Q - LITTELFUSE

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IXFH26N50Q - LITTELFUSE  - 3D model
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IXFH26N50Q Details

  • Manufacturer Part Number:

    IXFH26N50Q

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH26N50Q Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH26N50Q is a pad layout with a minimum size of 2.5mm x 2.5mm, with a 1.5mm x 1.5mm thermal pad in the center. The pad layout should be designed to accommodate the device's thermal characteristics and ensure good thermal conduction.
  • To ensure the reliability of the IXFH26N50Q in high-temperature applications, it is recommended to follow proper derating guidelines, ensure good thermal management, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermally conductive interface material and a heat sink if necessary.
  • The maximum surge current rating for the IXFH26N50Q is 100A for a 10ms pulse width. However, it is recommended to consult the datasheet and application notes for specific surge current ratings and guidelines for the intended application.
  • Yes, the IXFH26N50Q can be used in parallel to increase current handling, but it is essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.
  • The recommended storage temperature range for the IXFH26N50Q is -40°C to 125°C. It is essential to follow proper storage and handling guidelines to prevent damage to the device.

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IXFH26N50Q Overview

Use the download button to access the IXFH26N50Q 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFH2, or try a keyword search, such as Power Field-Effect Transistors

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