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IXFH52N30Q - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXFH52N30Q - MOSFET Transistor, HiPerFET, N Channel, 52 A, 300 V, 0.06 ohm, 10 V, 4 V

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PCB Footprints
IXFH52N30Q - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 AD_1
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3D Models
IXFH52N30Q - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 AD_1
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IXFH52N30Q Details

  • Manufacturer Part Number:

    IXFH52N30Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Pulsed Drain Current-Max (IDM):

    208 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFH52N30Q Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH52N30Q is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFH52N30Q is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed case temperature for the IXFH52N30Q is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to ensure the device's lifespan.
  • Yes, you can parallel multiple IXFH52N30Q devices to increase the current rating, but it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.

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IXFH52N30Q Overview

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