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IXFH80N65X2-4 - LITTELFUSE

Description: MOSFET 650V/80A TO-247-4L

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IXFH80N65X2-4 - LITTELFUSE - PCB symbol
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PCB Footprints
IXFH80N65X2-4 - LITTELFUSE PCB footprint - Other - Other - IXFH80N65X2-4-4
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3D Models
IXFH80N65X2-4 - LITTELFUSE - 3D model - Other - IXFH80N65X2-4-4
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IXFH80N65X2-4 Details

  • Manufacturer Part Number:

    IXFH80N65X2-4

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.6 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH80N65X2-4 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH80N65X2-4 can be found in the Littelfuse application note AN9313, which provides a detailed layout and land pattern recommendation for this device.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines provided in the Littelfuse application note AN9313. Additionally, use a solder with a melting point above 217°C (423°F) and a flux that is compatible with the device's lead-free finish.
  • The maximum allowed voltage derating for the IXFH80N65X2-4 is 80% of the maximum rated voltage (650V) at a junction temperature of 150°C. This means the maximum allowed voltage is 520V.
  • Yes, the IXFH80N65X2-4 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are properly matched and that the thermal management is adequate to prevent hotspots and uneven current distribution.
  • The recommended gate resistor value for the IXFH80N65X2-4 depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω and 100Ω. However, it is recommended to consult the Littelfuse application note AN9313 for more detailed guidance on gate resistor selection.

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IXFH80N65X2-4 Overview

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