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IXFH86N30T - LITTELFUSE

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IXFH86N30T - LITTELFUSE  - 3D model
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IXFH86N30T Details

  • Manufacturer Part Number:

    IXFH86N30T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    86 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    860 W

  • Pulsed Drain Current-Max (IDM):

    190 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH86N30T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH86N30T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFH86N30T is suitable for high-frequency applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliability in high-temperature environments, it is recommended to derate the device's power rating according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and airflow.
  • Yes, the IXFH86N30T can be paralleled for higher current applications, but it is recommended to ensure that the devices are matched for voltage and current ratings, and that the paralleling is done in a way that minimizes current imbalance and thermal mismatch.
  • The recommended gate drive voltage for the IXFH86N30T is 10-15V, with a minimum gate drive current of 1A to ensure reliable switching.

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IXFH86N30T Overview

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