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IXFK120N20P - LITTELFUSE

Description: MOSFET N-CH 200V 120A TO264AA

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IXFK120N20P Details

  • Manufacturer Part Number:

    IXFK120N20P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-264, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    265 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    714 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK120N20P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK120N20P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • While the IXFK120N20P is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for switching frequencies up to 20 kHz, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink to prevent thermal buildup.
  • The IXFK120N20P can withstand voltage transients up to 1.5 times the maximum rated voltage (1200V) for a duration of less than 10µs. However, it's recommended to use a voltage clamp or snubber circuit to limit voltage transients and ensure device reliability.
  • Yes, the IXFK120N20P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of threshold voltage and current gain to prevent uneven current sharing. Additionally, a common gate drive and a decoupling capacitor should be used to prevent oscillations and ensure stable operation.

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IXFK120N20P Overview

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