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IXFK170N20T - LITTELFUSE

Description: Trans MOSFET N-CH 200V 170A 3-Pin(3+Tab) TO-264

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IXFK170N20T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFK170N20T
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3D Models
IXFK170N20T - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFK170N20T
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IXFK170N20T Details

  • Manufacturer Part Number:

    IXFK170N20T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    170 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1150 W

  • Pulsed Drain Current-Max (IDM):

    470 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK170N20T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK170N20T is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • While the IXFK170N20T is a fast-switching IGBT, it is not recommended for high-frequency switching applications above 50 kHz due to its limited switching losses and thermal performance.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K should be used between the IGBT and heat sink.
  • The maximum allowed voltage transient for the IXFK170N20T is 200% of the rated voltage (i.e., 400V) for a duration of less than 10µs.
  • Yes, multiple IXFK170N20T devices can be paralleled to increase current handling, but it is essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive circuitry is designed to handle the increased current.

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IXFK170N20T Overview

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