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IXFK210N30X3 - LITTELFUSE

Description: MOSFET MSFT N-CH ULTRA JNCT X3 3&44

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PCB Footprints
IXFK210N30X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 Outline
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3D Models
IXFK210N30X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 Outline
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IXFK210N30X3 Details

  • Manufacturer Part Number:

    IXFK210N30X3

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.17

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    210 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.7 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1250 W

  • Pulsed Drain Current-Max (IDM):

    650 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK210N30X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK210N30X3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended land pattern for optimal thermal performance.
  • Yes, the IXFK210N30X3 is a high-reliability device that meets the requirements of AEC-Q101, which is a standard for automotive-grade components. It's suitable for use in high-reliability applications such as automotive, industrial, and medical devices.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the device to prevent thermal buildup.
  • Yes, the IXFK210N30X3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent overheating and reduce reliability. It's recommended to consult with a qualified engineer or the manufacturer's application notes for guidance on parallel configuration.
  • The maximum junction temperature of the IXFK210N30X3 is 150°C. It's essential to ensure that the device operates within the recommended temperature range to prevent damage and ensure reliability.

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IXFK210N30X3 Overview

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