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IXFK420N10T - LITTELFUSE

Description: MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A

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PCB Footprints
IXFK420N10T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - GJM1555C1HR80BB01D
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3D Models
IXFK420N10T - LITTELFUSE  - 3D model - Transistor Outline, Vertical - GJM1555C1HR80BB01D
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IXFK420N10T Details

  • Manufacturer Part Number:

    IXFK420N10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    420 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    530 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1670 W

  • Pulsed Drain Current-Max (IDM):

    1000 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK420N10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK420N10T is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While the IXFK420N10T is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for high-power, low-frequency switching applications. For high-frequency switching, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure proper cooling, follow the manufacturer's recommended thermal management guidelines. This includes using a heat sink with a thermal resistance of ≤ 1°C/W, applying a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXFK420N10T is ± 10% of the rated voltage (420V) for a duration of ≤ 100 μs. Exceeding this limit may damage the device or affect its reliability.
  • Yes, the IXFK420N10T can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the increased current and voltage stresses.

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IXFK420N10T Overview

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