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IXFK48N50 - LITTELFUSE

Description: MOSFET N-CH 500V 48A TO264AA

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IXFK48N50 Details

  • Manufacturer Part Number:

    IXFK48N50

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    500 W

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK48N50 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK48N50 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 6.5mm x 6.5mm.
  • Yes, the IXFK48N50 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed case temperature for the IXFK48N50 is 150°C, but it's recommended to keep the case temperature below 125°C for reliable long-term operation.
  • Yes, you can parallel multiple IXFK48N50 devices to increase current handling, but it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.

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IXFK48N50 Overview

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Part Image IXFK48N50 IXYS Corporation

Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264