Part Image

IXFK64N60P - LITTELFUSE

Description: --

Download IXFK64N60P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFK64N60P - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFK64N60P Details

  • Manufacturer Part Number:

    IXFK64N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.096 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK64N60P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXFK64N60P is -40°C to 150°C, with a junction temperature (Tj) of up to 175°C.
  • To ensure proper cooling, the IXFK64N60P should be mounted on a heat sink with a thermal resistance of less than 1°C/W. Additionally, the device should be operated within the recommended power dissipation limits.
  • The recommended gate drive voltage for the IXFK64N60P is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IXFK64N60P can be used in high-frequency applications up to 100 kHz, but the user should ensure that the device is properly snubbed and that the gate drive is optimized for high-frequency operation.
  • To protect the IXFK64N60P from overvoltage and overcurrent, the user should implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as a voltage clamp or a current sense resistor, in the application circuit.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFK64N60P Overview

Use the download button to access the IXFK64N60P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFK6, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFK64N60P

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IXFK64N60P Alternates

Showing results

Image Part Number Model
Part Image IXFK64N60Q3 IXYS Corporation

Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image IXFK64N60Q3 Littelfuse Inc

Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image IXFK64N60P IXYS Corporation

Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA