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IXFK80N60P3 - LITTELFUSE

Description: IXYS IXFK80N60P3 N-channel MOSFET Transistor, 80 A, 600 V, 3-Pin TO-264

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PCB Footprints
IXFK80N60P3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 AA
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3D Models
IXFK80N60P3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 AA
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IXFK80N60P3 Details

  • Manufacturer Part Number:

    IXFK80N60P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1300 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK80N60P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK80N60P3 is a standard TO-220 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, the IXFK80N60P3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K between the device and heat sink. Also, ensure good airflow around the heat sink.
  • The maximum allowed case temperature for the IXFK80N60P3 is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
  • Yes, you can parallel multiple IXFK80N60P3 devices to increase current handling, but it's crucial to ensure that each device has an identical thermal environment and is driven by a single gate driver to prevent current imbalance and oscillations.

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IXFK80N60P3 Overview

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