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IXFN110N60P3 - LITTELFUSE

Description: Trans MOSFET N-CH 600V 90A 4-Pin SOT-227B

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IXFN110N60P3 Details

  • Manufacturer Part Number:

    IXFN110N60P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1500 W

  • Pulsed Drain Current-Max (IDM):

    275 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN110N60P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN110N60P3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 1°C/W and a surface area of at least 10cm². The heat sink should be mounted using a thermal interface material (TIM) with a thermal conductivity of at least 1W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The maximum allowed case temperature for the IXFN110N60P3 is 150°C. Operating the device above this temperature can reduce its reliability and lifespan. It's recommended to design the system to keep the case temperature below 125°C to ensure optimal performance and reliability.
  • Yes, the IXFN110N60P3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the current sharing is balanced between the devices. It's recommended to follow the application notes and guidelines provided by Littelfuse Inc for parallel operation to ensure reliable and efficient operation.
  • The recommended gate drive voltage for the IXFN110N60P3 is between 10V and 15V. A higher gate drive voltage can reduce the switching losses and improve the device's performance. However, it's essential to ensure that the gate drive voltage does not exceed the maximum allowed voltage of 20V to prevent damage to the device.

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IXFN110N60P3 Overview

Use the download button to access the IXFN110N60P3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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