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IXFN140N30P - LITTELFUSE

Description: MOSFET N-CH 300V 110A SOT-227B

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IXFN140N30P - LITTELFUSE  - 3D model
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IXFN140N30P Details

  • Manufacturer Part Number:

    IXFN140N30P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN140N30P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN140N30P is a standard TO-220 package with a minimum pad size of 120 mils x 120 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While IXFN140N30P is a fast-switching IGBT, it's not optimized for high-frequency switching applications above 100 kHz. For high-frequency applications, it's recommended to use a dedicated high-frequency IGBT or MOSFET with a lower gate charge and output capacitance.
  • To ensure the reliability of IXFN140N30P in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
  • Yes, you can parallel multiple IXFN140N30P devices to increase current handling, but it's crucial to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased gate capacitance. Additionally, it's recommended to follow the manufacturer's guidelines for paralleling IGBTs.
  • The recommended gate drive voltage for IXFN140N30P is between 10V and 15V, with a maximum gate-source voltage of ±20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.

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IXFN140N30P Overview

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