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IXFN150N65X2 - LITTELFUSE

Description: Trans MOSFET N-CH 650V 145A 4-Pin SOT-227B

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IXFN150N65X2 Details

  • Manufacturer Part Number:

    IXFN150N65X2

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATE, UL RECOGNIZED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    145 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN150N65X2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN150N65X2 is a standard TO-220 package with a minimum pad size of 120 mils x 120 mils. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and electrical isolation.
  • Yes, the IXFN150N65X2 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductance to ensure optimal performance. Additionally, proper PCB layout and decoupling are crucial to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, gate drive voltage, and desired rise/fall times. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application notes or seek guidance from a qualified engineer to determine the optimal gate resistor value for your specific design.
  • Yes, the IXFN150N65X2 is AEC-Q101 qualified, which means it meets the stringent requirements for automotive applications. However, it's essential to ensure that the device is used within its specified operating conditions and that the system design meets the relevant automotive standards and regulations.
  • Yes, it's possible to parallel multiple IXFN150N65X2 devices to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch. Additionally, the gate drive circuitry must be capable of handling the increased gate charge and ensuring synchronized switching.

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IXFN150N65X2 Overview

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