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IXFN160N30T - LITTELFUSE

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IXFN160N30T - LITTELFUSE  - 3D model
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IXFN160N30T Details

  • Manufacturer Part Number:

    IXFN160N30T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    900 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN160N30T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN160N30T is a 5-pin TO-220 package with a minimum pad size of 0.2 inches x 0.2 inches and a thermal pad size of 0.4 inches x 0.4 inches.
  • To ensure reliable operation of the IXFN160N30T in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXFN160N30T is 400V, as specified in the datasheet. Exceeding this voltage may damage the device or affect its reliability.
  • Yes, the IXFN160N30T can be used in a parallel configuration to increase current handling, but it is recommended to follow proper design and layout guidelines to ensure equal current sharing and to minimize thermal mismatch between devices.
  • The recommended gate drive voltage for the IXFN160N30T is 10-15V, as specified in the datasheet. Using a higher gate drive voltage may improve switching performance, but it may also increase power losses and reduce device reliability.

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IXFN160N30T Overview

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