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IXFN210N30P3 - LITTELFUSE

Description: IXYS IXFN210N30P3 N-channel MOSFET Transistor, 192 A, 300 V, 4-Pin SOT-227B

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IXFN210N30P3 Details

  • Manufacturer Part Number:

    IXFN210N30P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    192 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1500 W

  • Pulsed Drain Current-Max (IDM):

    550 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN210N30P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN210N30P3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFN210N30P3 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure the thermal performance of IXFN210N30P3, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to ensure good thermal contact between the device and the heat sink.
  • The maximum allowed case temperature for IXFN210N30P3 is 150°C, and it is recommended to keep the case temperature below 125°C for optimal performance and reliability.
  • Yes, IXFN210N30P3 can be used in a parallel configuration to increase the current handling capability, but it is recommended to ensure that the devices are matched and that the current sharing is balanced to avoid overheating and reliability issues.

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IXFN210N30P3 Overview

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