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IXFN210N30X3 - LITTELFUSE

Description: Trans MOSFET N-CH 300V 210A 4-Pin SOT-227B

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IXFN210N30X3 Details

  • Manufacturer Part Number:

    IXFN210N30X3

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.17

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    210 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.7 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Pulsed Drain Current-Max (IDM):

    650 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN210N30X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN210N30X3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFN210N30X3 is rated for operation up to 150°C junction temperature, but it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
  • To ensure reliability in a high-vibration environment, it's recommended to use a secure mounting method, such as screwing or clipping, and to follow the recommended PCB layout and thermal management guidelines.
  • The recommended gate drive voltage for IXFN210N30X3 is 10-15V, but it can be operated with a gate drive voltage as low as 5V with reduced performance.
  • Yes, IXFN210N30X3 can be used in a parallel configuration, but it's recommended to ensure that the devices are matched in terms of threshold voltage and on-resistance, and to use a common gate drive signal to minimize mismatch.

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IXFN210N30X3 Overview

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