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IXFN300N20X3 - LITTELFUSE

Description: Trans MOSFET N-CH 200V 300A 4-Pin SOT-227B

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IXFN300N20X3 - LITTELFUSE  - 3D model
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IXFN300N20X3 Details

  • Manufacturer Part Number:

    IXFN300N20X3

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.2 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Pulsed Drain Current-Max (IDM):

    700 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN300N20X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN300N20X3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • While the IXFN300N20X3 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz, and using it at higher frequencies may lead to increased losses, reduced reliability, and potential oscillations.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the IGBT and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's thermal pad, and ensure the heat sink is properly mounted and secured. The heat sink should have a thermal resistance of less than 1°C/W to maintain a junction temperature below 150°C.
  • The IXFN300N20X3 can withstand voltage transients up to 400V for a duration of 100ns. However, it's recommended to limit voltage transients to 350V or less to ensure reliable operation and prevent potential damage to the device.
  • Yes, the IXFN300N20X3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and potential oscillations.

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IXFN300N20X3 Overview

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