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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFN360N10T
- Part Number IXFN360N10T
- Manufacturer LITTELFUSE
- Pin Count 4
- Part Category MOSFET (N-Channel)
- Last Modified Date Sep 6, 2025 11:04 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXFN360N10T Details
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Manufacturer Part Number:
IXFN360N10T
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Package Description:
SOT-227B, 4 PIN
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.3
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
3000 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
IXFN360N10T Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXFN360N10T is a standard TO-220 package footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure proper cooling, a heat sink with a thermal resistance of 1°C/W or lower is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher should be used to fill the gap between the device and the heat sink.
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The maximum allowed voltage transient for the IXFN360N10T is 400V for a duration of 10ms or less. Voltage transients exceeding this limit may damage the device.
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Yes, the IXFN360N10T can be used in a parallel configuration to increase the total current handling capability. However, it is essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent overheating and reduce the overall reliability.
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The recommended gate drive voltage for the IXFN360N10T is 10V to 15V, with a gate current of 1A to 2A. A higher gate drive voltage may be required for high-frequency switching applications.
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IXFN360N10T Overview
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