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IXFN48N60P - LITTELFUSE

Description: Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B

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IXFN48N60P - LITTELFUSE  - 3D model
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IXFN48N60P Details

  • Manufacturer Part Number:

    IXFN48N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.95

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN48N60P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXFN48N60P is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
  • To ensure proper cooling, follow the recommended thermal management guidelines in the datasheet. This includes providing adequate heat sinking, using thermal interface materials, and maintaining a safe distance from other heat sources. Additionally, consider using thermal simulation tools to model and optimize your design's thermal performance.
  • The recommended gate drive voltage for the IXFN48N60P is between 10V and 15V, as specified in the datasheet. However, it's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device and ensure reliable operation.
  • Yes, the IXFN48N60P can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • The maximum allowable voltage transient for the IXFN48N60P is specified in the datasheet as 60V/ns. Exceeding this limit can cause damage to the device or affect its reliability. It's essential to ensure that the device is properly protected against voltage transients in your design.

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IXFN48N60P Overview

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