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IXFN56N90P - LITTELFUSE

Description: MOSFET N-CH 900V 56A SOT-227B

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IXFN56N90P - LITTELFUSE  - 3D model
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IXFN56N90P Details

  • Manufacturer Part Number:

    IXFN56N90P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1000 W

  • Pulsed Drain Current-Max (IDM):

    168 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN56N90P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN56N90P is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • Yes, IXFN56N90P is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
  • Yes, you can parallel multiple IXFN56N90P devices to increase current handling, but it's essential to ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents.
  • The recommended gate drive voltage for IXFN56N90P is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can improve switching performance, but it's essential to ensure that the gate driver is capable of providing the required voltage and current.

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IXFN56N90P Overview

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