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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFN80N50
- Part Number IXFN80N50
- Manufacturer LITTELFUSE
- Pin Count 999
- Last Modified Date Feb 10, 2025 6:06 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXFN80N50 Details
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Manufacturer Part Number:
IXFN80N50
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Part Life Cycle Code:
Not Recommended
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Package Description:
SOT-227B, 4 PIN
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
3
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
6 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
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DS Breakdown Voltage-Min:
500 V
IXFN80N50 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXFN80N50 is a standard TO-220 package with a minimum pad size of 120 mils x 120 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
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While IXFN80N50 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz. For higher frequencies, consider using a dedicated high-frequency IGBT or MOSFET.
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To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C. Also, consider derating the device's current and voltage ratings according to the manufacturer's recommendations.
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Yes, you can parallel multiple IXFN80N50 devices to increase current handling, but it's crucial to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current. Additionally, consider the thermal management implications of paralleling devices and ensure that the heat sinking is adequate.
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The recommended gate drive voltage for IXFN80N50 is between 10 V and 15 V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI. A lower gate drive voltage may reduce power consumption but may also affect switching performance.
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IXFN80N50 Overview
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