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IXFN80N50P - LITTELFUSE

Description: Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B

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IXFN80N50P Details

  • Manufacturer Part Number:

    IXFN80N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    66 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN80N50P Frequently Asked Questions (FAQs)

  • The IXFN80N50P has a maximum surge current rating of 160A for 10ms, and 320A for 1ms.
  • The IXFN80N50P is rated for operation up to 150°C, but derating is required above 120°C. Consult the datasheet for specific derating curves.
  • The IXFN80N50P has a thermal resistance of 0.5°C/W. Ensure good thermal contact with a heat sink, and consider using a thermal interface material to minimize thermal resistance.
  • The recommended gate drive voltage for the IXFN80N50P is 10-15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IXFN80N50P can be paralleled to increase current handling, but ensure that the devices are matched and that the gate drive and thermal management are properly designed.

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IXFN80N50P Overview

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