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IXFN80N50Q2 - LITTELFUSE

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IXFN80N50Q2 - LITTELFUSE  - 3D model
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IXFN80N50Q2 Details

  • Manufacturer Part Number:

    IXFN80N50Q2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN80N50Q2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXFN80N50Q2 is -40°C to 150°C.
  • Yes, the IXFN80N50Q2 is designed for high-frequency switching applications up to 100 kHz.
  • The typical turn-on time is around 10-20 ns, and the typical turn-off time is around 30-50 ns.
  • Yes, the IXFN80N50Q2 can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and thermally coupled to avoid uneven current sharing.
  • The recommended gate drive voltage for the IXFN80N50Q2 is 10-15 V, but it can operate with a minimum of 5 V.

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IXFN80N50Q2 Overview

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