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IXFN82N60P - LITTELFUSE

Description: MOSFET N-CH 600V 72A SOT-227B

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IXFN82N60P - LITTELFUSE  - 3D model
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IXFN82N60P Details

  • Manufacturer Part Number:

    IXFN82N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.04 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN82N60P Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the IXFN82N60P is not explicitly stated in the datasheet, but it can be determined by consulting the Littelfuse application note AN1005, which provides guidance on SOA calculation for power MOSFETs.
  • To ensure proper thermal management, follow the thermal design guidelines provided in the datasheet, including the recommended PCB layout and thermal pad connection. Additionally, consider using a heat sink or thermal interface material to reduce the junction-to-case thermal resistance.
  • The recommended gate drive voltage for the IXFN82N60P is typically between 10V to 15V, depending on the specific application requirements. However, it's essential to ensure the gate drive voltage does not exceed the maximum rated gate-source voltage (Vgs) of ±20V.
  • Yes, the IXFN82N60P is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, it's crucial to consider the device's switching losses, parasitic inductances, and layout-related issues that may affect high-frequency performance.
  • The internal diode of the IXFN82N60P can be handled by using a suitable snubber circuit or by ensuring the device is operated within its recommended switching frequency and voltage ranges. Additionally, consider using a diode with a similar reverse recovery time to the internal diode to minimize switching losses.

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IXFN82N60P Overview

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