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IXFP4N85XM - LITTELFUSE

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IXFP4N85XM Details

  • Manufacturer Part Number:

    IXFP4N85XM

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    850 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP4N85XM Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP4N85XM is a standard SOT-227 package footprint, with a minimum pad size of 2.5mm x 2.5mm and a maximum pad size of 3.5mm x 3.5mm.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Avoid applying excessive heat or pressure, and ensure the component is properly aligned with the PCB pads.
  • The maximum allowed voltage transient for the IXFP4N85XM is 400V, with a maximum duration of 100ms. Exceeding this limit may damage the device.
  • The IXFP4N85XM is rated for operation up to 150°C, but derating is required above 125°C. Consult the datasheet for specific derating curves and ensure proper thermal management to prevent overheating.
  • To protect the IXFP4N85XM from EOS, use a TVS diode or a zener diode in parallel with the device, and ensure the circuit is designed to limit voltage transients and surge currents.

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IXFP4N85XM Overview

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